Welcome to High Power Devices and Circuits Group
High Power Semiconductors
It is well known that the conduction loss and switching loss always occur during the on-state and off-state. In order to reduce the power loss, power semiconductor devices must have lower specific on-resistance and lower reverse leakage current.
For the design of a power MOSFET, the specific on-resistance of a conventional vertical MOSFET is proportional to (BV)2.5. Once the voltage increases, the specific on-resistance significantly increases, leading to huge power loss. Therefore, a novel super junction MOSFET is considered because its specific on-resistance is proportional to (BV)1.23. Currently, the super junction MOSFET and edge termination with novel P column structures are successfully developed.
高功率半導體
一般的情況下，功率半導體元件在通路和斷路的時候，會發生傳導損失和交換損失，因此為了要減少這樣的功率損耗，必須具有比較低的特徵導通電阻和較低的逆向漏電流，而對於設計一個功率金氧半場效電晶體而言，傳統式的垂直金氧半場效電晶體的特徵導通電阻，是正比於其崩虧電壓的2.5次方，一旦電壓增加，特徵導通電阻也會顯著增加，從而導致龐大的功率損耗，因此，本實驗室發展以另一種特徵導通電阻，正比其崩潰電壓的1.23次方的新穎超級接面金氧半場效電晶體並有著新型的P柱結構的終端結構，成功的應用於現今各項產品之中。